| PART |
Description |
Maker |
| U634H256 U634H256D1A25 U634H256D1A25G1 U634H256D1A |
POWERSTORE 32K X 8 NVSRAM POWERSTORE 32K的8非易失性SRAM
|
Zentrum Mikroelektronik...
ZMD
Zentrum Mikroelektronik Dresden GmbH
ETC[ETC]
Zentrum Mikroelektronik Dresden AG
Electronic Theatre Controls, Inc.
|
| U634H256XS |
PowerStore 32K x 8 nvSRAM Die
|
SIMTEK[Simtek Corporation]
|
| IS61LV3216L-12K IS61LV3216L-12T IS61LV3216L-12KI I |
32K x 17 Low Voltage High-Speed CMOS Static RAM(3.3V,32K x 16 低压高速CMOS静态RAM)
32K x 16 LOW VOLTAGE CMOS STATIC RAM 32K X 16 STANDARD SRAM, 20 ns, PDSO44
|
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution, Inc.
|
| U632H16 |
PowerStore 2K x 8 nvSRAM PowerStore 2K × 8非易
|
Electronic Theatre Controls, Inc.
|
| IC62LV256 IC62LV256-70UI IC62LV256-100J IC62LV256- |
45ns; 3.3V; 32K x 8 low voltage static RAM
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
From old datasheet system
32K x 8 Low Power SRAM with 3.3V 32K的8低功耗SRAM.3V
|
ICSI[Integrated Circuit Solution Inc]
Hitachi,Ltd.
Cypress Semiconductor, Corp.
|
| CY7C4261V CY7C4271V 7C4291V CY7C4271V-25JC CY7C426 |
128K x 9 low voltage Deep Sync FIFO, 15ns
64K x 9 low voltage Deep Sync FIFO, 25ns
64K x 9 low voltage Deep Sync FIFO, 15ns
16K x 9 low voltage Deep Sync FIFO, 25ns
32K x 9 low voltage Deep Sync FIFO, 15ns
16K x 9 low voltage Deep Sync FIFO, 15ns
32K x 9 low voltage Deep Sync FIFO, 25ns
From old datasheet system
16K/32K/64K/128Kx9 Low Voltage Deep Sync FIFOs
|
Cypress
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| CY7C4281V CY7C4261V-15JC CY7C4261V-15JI CY7C4281V- |
CONNECTOR ACCESSORY 16K X 9 OTHER FIFO, 10 ns, PQCC32
Power Resistor; Series:MK; Resistance:50Mohm; Resistance Tolerance: /- 1 %; Power Rating:0.75W; Voltage Rating:400V; Temperature Coefficient: /-50 ppm; Mounting Type:Through Hole; Operating Temp. Min:0 C 16K X 9 OTHER FIFO, 8 ns, PQCC32
16K/32K/64K/128K x 9 Low-Voltage Deep Sync FIFOs 128K X 9 OTHER FIFO, 15 ns, PQCC32
16K/32K/64K/128K x 9 Low-Voltage Deep Sync\TM FIFOs
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| IS62C256AL-45ULI IS62C256AL-45UI IS62C256AL-45TL |
32K x 8 LOW POWER CMOS STATIC RAM 32K X 8 STANDARD SRAM, 45 ns, PDSO28
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| 87C38X2 87C34X2 87C32X2 87C31X2 80C31X2 P87C52 P87 |
80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V/ low power/ high speed 30/33 MHz
|
Philips Semiconductors
NXP
|
| 74LVT16374 74LVTH16374 74LVT16374GX 74LVTH16374GX |
32K, 4K X 8, 2.5V SER EE EXT, -40C to 125C, 8-SOIC 208mil, T/R 触发器| 16位| D型|小型终端/ ALVT，BICMOS工艺| SSOP封装| 48PIN |塑料
Low Voltage 16-Bit D-Type Flip-Flop
From old datasheet system
Low Voltage 16-Bit D Flip-Flop with 3-STATE Outputs
|
ON Semiconductor
Fairchild Semiconductor
|
| CY7C4265V CY7C4275V CY7C4255V CY7C4285V 7C4285V |
32K/64Kx18 Low Voltage Deep Sync FIFOs
From old datasheet system
|
Cypress
|
